Conventional von Neumann architecture faces many challenges in dealing with data-intensive artificial intelligence tasks efficiently due to huge amounts of data movement between physically separated data computing and storage units. Novel computing-in-memory (CIM) architecture implements data processing and storage in the same place, and thus can be much more energy-efficient than state-of-the-art von Neumann architecture....

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Further scaling of Si-based devices below 10nm gate length is becoming challenging due to the control of thin channel thickness. For gate length smaller than 10nm, sub-5nm thick Si channel is required. However, the process-induced Si consumption and the reduction of carrier mobility in ultrathin Si layer can limit the channel thickness scaling. Today, the...

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CEA Tech Nouvelle-Aquitaine, created in 2013, set up a new laboratory, since more than two years, focused on both the development of materials and the high throughput screening to accelerate the discovery of materials for the next generations of Li-ion batteries. For that, the CEA Tech Nouvelle-Aquitaine acquires different vacuum deposition equipment (sputtering, evaporation, atomic...

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Quantum computers hold great promise for advancing science, technology, and society by solving problems beyond classical computersapos; capabilities. One of the most promising quantum bit (qubit) technologies are spin qubits, based on quantum dots (QDs) that leverage the great maturity and scalability of semiconductor technologies. However, scaling up the number of spin qubits requires overcoming...

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Cryo-electron tomography (CET) is a powerful technique for the 3D structural analysis of biological samples in their near-native state. CET has seen remarkable advances in instrumentation in the last decade but the classical weighted back-projection (WBP) remains by far the standard CET reconstruction method. Due to radiation damage and the limited tilt range within the...

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A high resistivity substrate is essential for the design of state-of-the-art high-frequency circuits. The high-resistivity (HR) SOI substrate with a trap-rich layer below the buried oxide (BOX) is the option with the highest performance at present for CMOS technologies. However, these substrates have two major limitations: (1) their relatively high price and (2) the degradation...

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Power devices based on wide band gap semiconductors are increasingly being studied and adopted in commercial products, driven by the electrification of our societies. Among these wide band gap devices, SiC-based technologies are the most mature, at the industrial production stage. Other materials are being studied to achieve higher performance, in particular diamond, whose intrinsic...

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Future microelectronic components will be ever smaller and ever more energy-efficient. To meet this challenge, 2D materials are excellent candidates, thanks to their remarkable dimensions and electronic properties (high mobility of charge carriers, high light emission/absorption). What's more, they feature van der Waals (vdW) surfaces, i.e. no dangling bonds, enabling them to retain their properties...

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In recent years, there have been numerous technological advancements in silicon-based semiconductors. However, the limits in terms of frequency performance and power seem to have been reached, requiring the development of new type III-V devices (such as InP and GaN) that are faster, more powerful and well adapted for new RF mmW applications. For reasons...

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