Engineer in Electrical Characterization and Reliability of transistors for RF applications

Job description: Your work will mainly focus on the study of the DC reliability of bipolar transistors of an industrial BiCMOS technology. It will be carried out in close collaboration with our industrial partner STMicroelectronics. Your work is manifold. It will first consists in a systematic study of the device instabilities with respect to many process variants (base & collector junction profile variants, trench isolation ...). The samples will mainly be provided by our partner. Then the device self-heating will be investigated as well as its impact on these instabilities. Finally, the role played by these instabilities on device noise characteristics will be addressed. You use the test procedures already developed within the electrical characterization laboratory of LETI. This task will come along TCAD simulations. They will be useful to understand which defects can be responsible for these instabilities. You are part of the Advanced Transistor Laboratory (LTA). More broadly, you are in charge of : The electrical characterization of bipolar devices using dedicated test benches, The development of new characterizations allowing a better understanding of the instabilities seen in these transistors, A regular reporting to project teams, and to our industrial partner, in order to interpret the results obtained and to propose levers for improving components. Why join our team? We can offer you : Experience at the cutting edge of innovation, with strong potential for industrial development, Training to reinforce your skills or acquire new ones, A position in the heart of the Grenoble metropolitan area, easily accessible via the soft mobility encouraged by the CEA, 85% contribution to public transport costs, A recognized work-life balance, A policy of diversity and inclusion, Company restaurants, An active CSE in terms of leisure and extra-professional activities, A savings scheme matched by the CEA.

Institute description: BiCMOS technology is essential for 5G and future 6G applications, as it integrates bipolar transistors for RF functions, such as power amplification, with CMOS transistors for control functions. However, in 6G, the bipolar transistor is pushed to its limits, raising concerns about overall reliability. In particular, device instabilities are sometimes observed, triggered by the high stress current passing through the transistor. These instabilities affect the transistor's noise characteristics, which are crucial for certain RF applications. In this context, it is critical to understand the root causes of these instabilities and identify the technological adjustments that can be made to eliminate them, ensuring both performance and reliability standards are met.

Your profile: Formation initiale Diplôme d’ingénieur (Bac +5) ou Doctorat (Bac +8) avec une solide expérience dans le domaine de la physique des semi-conducteurs, la caractérisation électrique des dispositifs bipolaires ou CMOS, et si possible, une bonne connaissance des mécanismes de fiabilité. Une expérience en modélisation TCAD serait un plus. Compétences techniques Connaissance de la physique des semi-conducteurs, Caractérisation électrique DC de transistors bipolaires et MOS, Bon niveau en anglais (reporting et présentations). Conformément aux engagements pris par le CEA en faveur de l'intégration des personnes en situation de handicap, cet emploi est ouvert à toutes et à tous. Le CEA propose des aménagements et/ou des possibilités d'organisation, rejoignez-nous !

Languages: English Fluent