Modeling and Optimization of 2D Material-Based Field-Effect Transistors: From Multi-Physics Simulations to Atomic-Scale Insights


Field-effect transistors employing 2D materials are emerging as promising candidates due to their superior mobility and atomic thinness. Nonetheless, this technology faces multiple challenges, including minimizing contact resistances, controlling variability, and optimizing short-channel transistors (lt; 10 nm). At CEA-Leti, a concerted experimental and computational effort is underway to address these issues and propel the development of 2D material-based technologies. This doctoral research project is situated within this context, aiming to harness multi-physics simulations to evaluate and enhance the performance of 2D material-based FETs by exploring the interplay between technological parameters and device performance. The flexibility in choosing materials and geometric configurations opens the door to pioneering research directions. A pivotal aspect of this work will involve coupling Technology Computer-Aided Design (TCAD) simulations with ab initio methods to achieve a comprehensive understanding of the devicesapos; structural and electronic behaviors at the atomic level. The project benefits from access to state-of-the-art computational resources and software (Sentaurus, VASP, GPAW, etc.), supported by CEA-Letiapos;s expertise in simulation methodologies and close collaboration with experimental teams. This doctoral endeavor offers a unique opportunity to develop a wide-ranging skill set in electronic device simulation, contributing to the scientific community through presentations at leading international conferences and publications in esteemed journals.

Master 2 in physics or microelectronics

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