Towards sustainable electronics: impact and understanding of the substitution of high GWP gases on plasma etching processes


To address environmental concerns in the microelectronics industry, CEA-LETI is committed to an eco-innovation approach [1]. In this context, the development of eco-responsible processes that reduce PerFluoro-Carbon (PFC) emissions is crucial [2]. Plasma etching processes are a major emitter of PFCs because they traditionally use high GWP gases. The aim of this thesis will be to develop plasma etching processes on 300mm substrates by replacing fluorinated gases such as NF3, SF6 and CF4 with high GWP by F2 (GWP ~0). This work will involve understanding the changes induced in the etching processes for advanced devices. The dual challenge is to reduce the environmental impact while guaranteeing the high performance of these devices. To achieve this objective, you will implement new F2-based mixtures on targeted applications for etching materials and cleaning reactors. You will provide comparative data on the performance of these new processes compared with reference processes in terms of etching results and the level of abatement of reaction by-products. You will be based at the CEA-LETI Etching Laboratory. The work, which will be predominantly experimental on CEA-Leti's 300mm platform (see :, will benefit from the state-of-the-art process equipment and characterisation resources of the Nanotechnologies platform. The scientific and industrial interest of the subject guarantees that your work will be showcased in international communications. If you want your research to have an impact on society, apply now!

M2 ou Ingénieur en Sciences et Génie des Matériaux / Plasma

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