Laser Fault Injection Physical Modelling in FD-SOI technologies: toward security at standard cells level on FD-SOI 10 nm node

The cybersecurity of our infrastructures is at the very heart in the digital transition on-going, and security must be ensured throughout the entire chain. At the root of trust lies the hardware, integrated circuits providing essential functions for the integrity, confidentiality and availability of processed information. But hardware is vulnerable to physical attacks, and defence has to be organised. Among these attacks, some are more tightly coupled to the physical characteristics of the silicon technologies. An attack using a pulsed laser in the near infrared is one of them and is the most powerful in terms of accuracy and repeatability. Components must therefore be protected against this threat. As the FD-SOI is now widely deployed in embedded systems (health, automotive, connectivity, banking, smart industry, identity, etc.) where security is required. FD-SOI technologies have promising security properties as being studied as less sensitive to a laser fault attack. But while the effect of a laser fault attack in traditional bulk technologies is well handled, deeper studies on the sensitivity of FD-SOI technologies has to be done in order to reach a comprehensive model. Indeed, the path to security in hardware comes with the modelling of the vulnerabilities, at the transistor level and extend it up to the standard cells level (inverter, NAND, NOR, Flip-Flop) and SRAM. First a TCAD simulation will be used for a deeper investigation on the effect of a laser pulse on a FD-SOI transistor. A compact model of an FD-SOI transistor under laser pulse will be deduced from this physical modelling phase. This compact model will then be injected into various standard cell designs, for two different objectives: a/ to bring the modelling of the effect of a laser shot to the level of standard cell design (where the analog behaviour of a photocurrent becomes digital) b/ to propose standard cell designs in FD-SOI 10nm technology, intrinsically secure against laser pulse injection. Experimental data (existing and generated by the PhD student) will be used to validate the models at different stages (transistor, standard cells and more complex circuits on ASIC). Ce sujet de thèse est interdisciplinaire, entre conception microélectronique, simulation TCAD et simulation SPICE, tests de sécurité des systèmes embarqués. Le candidat sera en contact/encadré avec deux équipes de recherche; conception microélectronique , simulation TCAD et sécurité des systèmes embarqués. Contacts: romain.wacquez@cea.fr, jean-frederic.christmann@cea.fr, sebastien.martinie@cea.fr