Innovative dry etching process of exotic materials

The advantageous properties (electro-optical, - acoustic, -mechanical) of new materials such as Sc-doped ALN, LNO, LTO or KNN make them essential to meet the development needs of integrated optics, RF telecommunication and microsystems. The production of patterns with submicron dimensions with a significant etch rate (>100nm/min), a vertical profile and a reduced roughness of the pattern's sidewalls are the main goals of the thesis work so as to satisfy the performance criteria of the devices targeted at the application level.