The terahertz (THz) range (0.1–10 THz) is increasingly exploited for imaging and spectroscopy (e.g. security scanning, medical diagnostics, non-destructive testing) because many materials are transparent to THz radiation and have unique spectral signatures. However, existing sources struggle to offer both high power and wide tunability: electronic sources (diodes, QCLs) deliver milliwatts but over narrow bands,...

Learn more Apply

Block copolymers (BCP) are an industrial technology in full expansion, offering promising perspectives for material nanostructuring. These polymers, composed of chemically distinct block chains, self-assemble to form ordered structures at the nanometric scale. However, their current use is limited to specific nanostructuring per product (1 product = 1 nanostructuring), thus restricting their application potential. This...

Learn more Apply

The proposed PhD work lies within the exploration of new supercapacitor and hybrid energy storage technologies, aiming to combine miniaturization, high power density, and CMOS process compatibility. The hosting laboratory (LTEI/DCOS/LCRE) has recognized expertise in thin-film integration and dielectric material engineering, offering unique opportunities to investigate ferroelectric (FE) and antiferroelectric (AFE) behaviors in doped hafnium...

Learn more Apply

Complementary Field Effect Transistors (CFETs) represent a new generation of vertically stacked CMOS devices, offering a promising path to continue transistor miniaturization and to meet the requirements of high-performance computing. The objective of this PhD work is to study and optimize the strain engineering of the transistor channel in order to enhance carrier mobility and...

Learn more Apply

This PhD aims to design analog liquid neural networks for generative edge intelligence. Current neuromorphic architectures, although more efficient through in-memory computing, remain limited by their extreme parameter density and interconnection complexity, making their hardware implementation costly and difficult to scale. The Liquid Neural Networks (LNN), introduced by MIT at the algorithmic level, represent a...

Learn more Apply

Thanks to strong collaborations between teams from several research institutes and the cleanroom facilities at CEA-LETI, Grenoble has been a pioneer in the development of spin qubit devices as a platform for quantum computing. The lifetime of these spin qubits is highly sensitive to fluctuations in the qubitapos;s electrical environment, known as charge noise. Charge...

Learn more Apply

This PhD research focuses on the integrated co-optimization of materials, fabrication processes and device architectures to enable high-performance RF transistors on advanced nanometer-scale technologies. The work aims to understand and improve key RF figures of merit—such as transit frequency, maximum oscillation frequency, noise behaviour and linearity—by establishing clear links between material choices, process innovations and...

Learn more Apply

To increase the performance of quantum computers, three-dimensional (3D) integration is now the key! Using technologies such as flip-chip bonding, multi-layer wiring or even through-silicon vias (TSV), 3D integration offers solutions to increase the number of qubits on a processor, reduce signal loss and cross-talk and even improve thermal management. All of these aspects are...

Learn more Apply

Recent advances in electric motors and associated power electronics have led to a significant increase in power density requirements. This increase in power density means smaller heat exchange surfaces, which amplifies the challenges associated with dissipating the heat generated by power electronics components during operation. In fact, the lack of adequate heat dissipation causes electronic...

Learn more Apply

In the race towards building a quantum computer, there is a deep interest in fabricating devices based on the robust and scalable silicon FD-SOI technology. One example is the Josephson Field Effect Transistor (JoFET) whose operability relies on the high transparency of the interface between the superconducting source/drain regions and the semiconducting channel. Such transparency...

Learn more Apply

This work aims to develop Advanced ultrathin cunductive layers (lt;10nm) by ALD (Atomic Layer Deposition)for électrodes use(resistivity lt;mOhm)of high density ionic capacitors fabricated on 3D complex structures (high aspect ratio 1:100). The preliminary effort will be focused on the deep analysis and the impact of interface formation between ionic layers and subseqquent electrode layers. One...

Learn more Apply

As part of the FAMES project and the European ChipACT initiative, which aim to ensure France’s and Europe’s sovereignty and competitiveness in the field of electronic nano-components, CEA-LETI has launched the design of new FD-SOI chips. Among the various modules being developed, the fabrication of electrical contacts is one of the most critical modules in...

Learn more Apply

The growing demand for III-V semiconductors in high-efficiency photovoltaics, quantum photonics, and advanced imaging technologies requires innovative and cost-effective fabrication methods. This PhD project focuses on developing plasma etching processes for In-based III-V semiconductors to produce high aspect ratio (HAR) structures on large wafers from 100 to 300 mm. The research addresses two key challenges:...

Learn more Apply

Advanced nanoelectronics and quantum devices rely on ultrathin oxides and engineered interfaces whose chemical composition, stoichiometry and thickness must be controlled with sub-nanometer precision. LETI is installing the first 300-mm multi-energy XPS–HAXPES tool with angle-resolved capability, enabling quasi in situ chemical metrology from deposition to characterization. This PhD will develop quantitative, multi-energy and angle-resolved XPS/HAXPES...

Learn more Apply

Switches based on phase change materials (PCM) demonstrate excellent RF performance (FOM lt;10fs) and can be co-integrated into the BEOL of CMOS processes. However, their reliability is still very little studied today. Failure modes such as heater breakage, segregation, or the appearance of cavities in the material are shown during endurance tests, but the mechanisms...

Learn more Apply

This PhD topic offers a unique opportunity to enhance your skills in GaN power devices and develop cutting-edge architectures. You’ll work alongside a multidisciplinary team specializing in material engineering, characterization, device simulation, and electrical measurements. If you’re eager to innovate, expand your knowledge, and tackle state-of-the-art challenges, this position is a valuable asset to your...

Learn more Apply

For next-generation microelectronics, Area Selective Deposition (ASD)is a promising approach to simplify integration schemes for the most advanced technology nodes. These ASD approaches need to be adapted according to a trio comprising the material to be deposited, the growth surface, and the inhibited surface. This PhD focuses on the area selective deposition of oxides (such...

Learn more Apply

Direct dies-to-wafer bonding has become, in recent years, a major development axis in microelectronics and at the heart of many LETI projects, both in silicon photonics and for 3D applications involving hybrid bonding. Due to their small size, die bonding allows the study of direct bonding edge effects and the implementation of new direct bonding...

Learn more Apply

Discover a unique phd opportunity where you will dive into the heart of innovation in memory technologies. You will develop strong expertise in areas such as electrical characterization and the understanding of degradation phenomena in chalcogenide-based memories. By joining our multidisciplinary teams, you will play a key role in studying and improving the endurance of...

Learn more Apply