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PostDoc
LLMs hybridation for requirements engineering
Developing physical or digital systems is a complex process involving both technical and human challenges. The first step is to give shape to ideas by drafting specifications for the system to be. Usually written in natural language by business analysts, these documents are the cornerstones that bind all stakeholders together for the duration of the...
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PostDoc
Digital correction of the health status of an electrical network
Cable faults are generally detected when communication is interrupted, resulting in significant repair costs and downtime. Additionally, data integrity becomes a major concern due to the increased threats of attacks and intrusions on electrical networks, which can disrupt communication. Being able to distinguish between disruptions caused by the degradation of the physical layer of an...
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PostDoc
Design and Implementation of a Neural Network for Thermo-Mechanical Simulation in Additive Manufacturing
The WAAM (Wire Arc Additive Manufacturing) process is a metal additive manufacturing method that allows for the production of large parts with a high deposition rate. However, this process results in highly stressed and deformed parts, making it complex to predict their geometric and mechanical characteristics. Thermomechanical modeling is crucial for predicting these deformations, but...
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PostDoc
High-performance computing using CMOS technology at cryogenic temperature
Advances in materials, transistor architectures, and lithography technologies have enabled exponential growth in the performance and energy efficiency of integrated circuits. New research directions, including operation at cryogenic temperatures, could lead to further progress. Cryogenic electronics, essential for manipulating qubits at very low temperatures, is rapidly developing. Processors operating at 4.2 K using 1.4 zJ...
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PostDoc
DTCO for RF amp; mmW Applications:Focus on Homogeneous amp; Heterogeneous Chiplet Hybrid Bonding Challenge
In recent years, there have been numerous technological advancements in silicon-based semiconductors. However, the limits in terms of frequency performance and power seem to have been reached, requiring the development of new type III-V devices (such as InP and GaN) that are faster, more powerful and well adapted for new RF mmW applications. For reasons...