Global demand on semiconductor solutions (device, circuit, system) has skyrocketed during the last few years, especially in reliation with COVID worldwide crisis. This industry has revealed its significance in the present world has well as its weaknesses. The European council decided to launch an ambisious program called apos;Chip Actapos; to develop a solid semiconductor european...

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Improving the resolution of MEMS sensors always means increasing the cost of the component (surface area) or his electronics (complexity and power consumption). In view of the current challenges of energy sobriety, it is essential to explore new disruptive ways to reduce the impact of high-performance sensors. Chaos is a deterministic phenomenon exponentially sensitive to...

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Since the late 2000s with the advent of 45nm CMOS nodes, the control of critical dimensions (CD) of the structures in the photolithography stage has become critical to the reliability of printed circuit boards. Optical photolithography remains the most economical and widespread technique for high volume production in the semiconductor industry. For this type of...

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Context: There is a need for very highly-doped semiconductor specimens for the continued development of Si/Ge CMOS devices and for doping III-V materials where the ionisation energy leads to a low concentration of carriers. In order to provide these highly doped specimens, new growth and implantion methods are required. These need to be better understood...

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Integrated silicon photonics, which consists of using manufacturing processes from the microelectronics industry to produce photonic components, is considered a critical future technology for very high-speed communications and computing applications. The creation of silicon photonics devices requires the manipulation of fully curved designs (so-called non-Manhattan). This gives rise to numerous challenges during their manufacturing, and...

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The development of 10 nm FDSOI (Fully Depleted Silicon On Insulator) technology leads to new constraints on the architecture of transistors. The gate width (10 nm) requires a specific integration of the gate that controls the threshold voltage. The variability of the threshold voltage depends on the concentration, spatial distribution and chemical nature of dopants...

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An explosion in global data production is observed today, largely attributed to the emergence of 5G and the Internet of Things. Faced with the challenges of managing vast amounts of data and to avoid a significant increase in global electricity consumption due to data storage, it is necessary to develop efficient, energy-efficient, and dense non-volatile...

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Context: Lithium-based materials, whether thin layers or bulk material, are of great interest for varied applications (batteries, RF components…). However, their cohabitation with other “standard” materials for microelectronics requires special attention regarding dissemination in the clean room and a potential impact on electrical performances of devices. Indeed, as a precaution, these materials are “confined” on...

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The main objective of the thesis is to provide reliable support to the processing of front-end materials for advanced FD-SOI technologies. To achieve this, methodologies for elemental quantification focused on the use of hard X-ray photoelectron spectroscopy (HAXPES) will be developed and validated through a collaborative framework at multiple levels, both internal and industrial. These...

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Within the European Chips Act, CEA-Leti is strongly committed to support the reduction of component dimensions to reach the future technological nodes (below 10 nm). To detect and account the line edge roughness becomes critical for such small dimensions since ‘the few Angstrom error’ becomes critical (several % of error) for sub-10nm devices. This PhD...

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