Vertical GaN power devices development using localized epitaxy

Job description: This PhD offers a unique opportunity to enhance your skills in GaN power devices and develop cutting-edge architectures. You’ll work alongside a multidisciplinary team specializing in materials engineering, characterization, device simulation, and electrical measurements. If you’re eager to innovate, expand your knowledge, and tackle state-of-the-art challenges, this position is a valuable asset to your career! Vertical GaN power components hold great promise for power applications beyond the kV range. Localized epitaxy of GaN enables the creation of thick structures on Si substrates at a competitive cost, with demonstrated success for diodes and pseudo-vertical transistors. However, this approach’s significant surface area limits the energy density of the devices. This PhD aims to develop denser, fully vertical components using layer transfer methods. You’ll study their electrical characteristics to monitor the impact of technological variations on their performance. Throughout this PhD, you’ll gain comprehensive knowledge in microelectronics processes, electrical characterization, and TCAD (Technology Computer-Aided Design) simulation. You’ll collaborate with a multidisciplinary team including our partner CNRS-LTM and deepen your understanding of GaN power devices, all while being part of a lab dedicated to the development of wide-bandgap power devices. You will have the opportunity to write publications and patents.

Your profile: master 2 ou ingénieur en microélectronique