High-Endurance Chalcogenide Memories for Next-Generation AI

Job description: Discover a unique phd opportunity where you will dive into the heart of innovation in memory technologies. You will develop strong expertise in areas such as electrical characterization and the understanding of degradation phenomena in chalcogenide-based memories. By joining our multidisciplinary teams, you will play a key role in studying and improving the endurance of Phase-Change Memory (PCM) and Threshold Change Memory (TCM) devices—two promising technologies for high-performance artificial intelligence applications. You will take part in innovative projects combining scientific rigor and applied research on nanoscale devices, working closely with another CEA PhD student who conducts advanced physico-chemical analyses (TEM) to investigate degradation mechanisms. You will have the opportunity to contribute actively to tasks such as: Electrical characterization of PCM and TCM devices to analyze cycling-induced degradation Development and evaluation of innovative programming protocols to extend endurance limits Proposing solutions to improve the reliability and performance of next-generation memories Regular collaboration and discussion with the CEA PhD student to interpret TEM results and draw conclusions about degradation mechanisms

Your profile: Microélectronique, physique des matériaux