DLTS characterization on wide band gap semiconductor materials

Job description: Your mission will involve implementing electrical characterizations of trap spectroscopy (DLOS, DLTS, admittance) on wide bandgap materials and devices. This work is part of recent collaborations with university laboratories and follows initial efforts that have led to the development of a consistent test architecture across different sites. This postdoctoral work will initially focus on finalizing the measurement benches developed for DLTS and DLOS characterizations, ensuring their mastery (temperature control, capacitance transients, light spectroscopy, etc.). Beyond mastering the measurements, interpreting the results requires a strong understanding of the state of the art, and sufficient time will be dedicated to deepening this knowledge. The studies conducted within this framework will involve several wide bandgap materials, starting with SiC. This topic is highly conducive to the valorization of results through publication. In parallel with this technique, the collaborative framework may initiate a thesis on the same perspective of defect analysis, and the postdoc may participate in supervising this research.

Your profile: doctorat en physique des matériaux