Study of the stability of Si-CMOS Structures for the implementation of Spin Qubits

  • Advanced nano characterization,
  • phD
  • Grenoble
  • Level 7
  • 2024-10-01
  • ROUSSELY Grégoire (DRT/DCOS//LDQC)
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Silicon-based spin qubits in CMOS structures stand out for their compatibility with semiconductor technologies and their scalability potential. However, impurities and defects introduced during fabrication lead to noise and instability, which affect their performance. The objective is to characterize devices fabricated at CEA-Leti, from room temperature to cryogenic temperatures, to evaluate their quality and understand the physical mechanisms responsible for their instability. The goal is to improve the design of the devices and ideally establish a method to identify the most promising devices without requiring measurements at very low temperatures. The candidate should have skills in the following areas: - Experimental physics and semiconductors. - Algorithm programming and data analysis. - Knowledge in nanofabrication, low-temperature physics, and quantum physics (desirable).

M2 ou Ecole ingénieur physique/matériaux semiconducteurs

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