Investigation and Modeling of Ferroelectric and Antiferroelectric Domain Dynamics in HfO2-Based Capacitors

Job description: The proposed PhD work lies within the exploration of new supercapacitor and hybrid energy storage technologies, aiming to combine miniaturization, high power density, and CMOS process compatibility. The hosting laboratory (LTEI/DCOS/LCRE) has recognized expertise in thin-film integration and dielectric material engineering, offering unique opportunities to investigate ferroelectric (FE) and antiferroelectric (AFE) behaviors in doped hafnium oxide (HfO2). The thesis will focus on the experimental investigation and physical modeling of thin-film HfO2-based capacitors, intentionally doped to exhibit ferroelectric or antiferroelectric properties depending on the composition and deposition conditions (for instance, through ZrO2 or SiO2 doping). Such materials are particularly attractive for realizing devices that combine non-volatile memory and energy storage functions on a single CMOS-compatible platform, enabling ultra-low-power autonomous systems such as edge computing architectures, environmental sensors, and smart connected objects. The research will involve the fabrication and characterization of metal–insulator–metal (MIM) capacitors based on doped HfO2 integrated on silicon substrates. Systematic electrical measurements—including current–voltage (I–V) and polarization–electric field (P–E) characterizations—will be carried out under various frequencies, amplitudes, and cycling conditions to investigate the relaxation mechanisms of FE and AFE domains. Analysis of minor hysteresis loops will provide access to the distribution of activation energies and enable the modeling of domain relaxation dynamics. A physical model will be developed or refined to describe FE/AFE transitions under cyclic electrical excitation, incorporating effects such as charge trapping, mechanical stress, and domain nucleation kinetics. The overall objective is to optimize the recoverable energy density and the energy conversion efficiency of these capacitors, while establishing design guidelines for compact, efficient, and silicon-integrable energy storage devices. The insights gained from this work will contribute to a deeper understanding of the dynamic mechanisms governing FE/AFE behavior in doped HfO2, with potential impact on ferroelectric memories, energy-harvesting devices, and low-power neuromorphic architectures.

Your profile: Nanotechnologies; solid-state physics; solid-state devices