ALD materials for FE and AFE capacitances

Job description: Ultrathin HfO2-based materials are regarded as promising candidates for embedded non-volatile memory (eNVM) and logic devices. The CEA-LETI has a leadership position in the field of BEOL-FeRAM memories ultra-low consumption (lt;100fj/bit) at low voltage (lt;1V). In this context, the developments expected in this thesis aim to evaluate the impact of HfO2-based ferroelectric FE and antiferroelectric AFE layers (10 to 4 nm fabricated by Atomic Layer Deposition ALD) on the FeRAM properties and performances. In particular, the subject will permit a deep understanding of the crystallographic phases governing the FE/AFE properties using advanced measurements techniques offered by the CEA-LETI nano-characterization platform (physico-chemical, structural and microscopy analysis, electrical measurements). Several integration solutions for ferroelectric capacitances FeCAPs using ALD FE/AFE layers will be studied including doping, interface layers, sequential fabrication w/wo air break… Thus, the developments based on FeCAPs stack fabricated using 300mm ALD deposition tool aspires to explore the following items: 1-Doping incorporation in FE/AFE layers (La, Y…) 2-Engineering of the interface between FE/AFE layers and top/bottom electrode 3-Plasma in-situ treatment of bottom electrode surface 4-Sequential deposition with and without air break [1] S. Martin et al. – IEDM 2024 [2] Appl. Phys. Lett. 124, 243508 (2024)

Your profile: Ingénieur ou M2 matériaux et instrumentation, microélectronique