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Emerging materials and processes for nanotechnologies and microelectronics
Integration of new materials with strong spin-orbit coupling (van der Waals tellurides) for SOT-MRAM memories
The new concepts offered by “spinorbitronics” make it possible to envisage more frugal electronics. In particular, for writing a magnetic memory (MRAM), a new concept of magnetization reversal by a spin-orbit couple is emerging. Its principle permits a significant decrease in memory writing energy and enhanced endurance. Its operation is based on the conversion of...
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Emerging materials and processes for nanotechnologies and microelectronics
Towards sustainable electronics: impact and understanding of the substitution of high GWP gases on plasma etching processes
To address environmental concerns in the microelectronics industry, CEA-LETI is committed to an eco-innovation approach [1]. In this context, the development of eco-responsible processes that reduce PerFluoro-Carbon (PFC) emissions is crucial [2]. Plasma etching processes are a major emitter of PFCs because they traditionally use high GWP gases. The aim of this thesis will be...
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Emerging materials and processes for nanotechnologies and microelectronics
AI for SEM metrology: image generation and 3D reconstruction applied to microelectronic devices
Scanning Electron Microscopy (SEM) imaging is the current reference method for quality control in the microelectronic industry, due to the size of the objects involved and to the yield expected when these tools are used in production lines. In order to improve our knowledge on physics in play during imaging and to develop more performant...
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Emerging materials and processes for nanotechnologies and microelectronics
Qubit conditioning circuit based on Single Electron Transistor electronics
A new research direction has emerged that consists in the design of cryogenics integrated circuits (cryo-CMOS) to address the needs of many scientific experiments in astronomy, in physics of particles or in quantum physics. Nevertheless, the power consumption of such solutions is still high and prevent their use in applications that necessitate the conditioning of...
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Emerging materials and processes for nanotechnologies and microelectronics
Study of InP and AsGa wafer bonding mechanisms
Direct bonding consists of bringing sufficiently smooth and clean surfaces into contact, in order to create adhesion between them without adding any external material. This technology presents many advantages for the production of stacked structures for microelectronics and micro-technologies and has given rise to numerous innovations (manufacturing of SOI by SmartCutTM, manufacturing of SmartSiCTM, production...
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Emerging materials and processes for nanotechnologies and microelectronics
“Remote epitaxy" of Cd(Hg)Te
A new way of considering epitaxy has recently appeared thanks to the development of 2D materials. Whereas conventional epitaxy involving covalent bonds is limited in particular to a lattice parameter matching between the substrate and the epitaxial membrane, it appears that this constraint can be significantly released if the epitaxial growth is done by van...
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Emerging materials and processes for nanotechnologies and microelectronics
Quantum Cascade III-V/Si laser micro-sources
This thesis project focuses on the development of innovative micro-laser sources by combining III-V Quantum Cascade materials with Silicon Photonic Crystals. By integrating these advanced technologies, we aim to create hybrid lasers emitting in the middle infrared. This approach has significant advantages for medium-infrared spectrometry (MIR), a crucial technique for the chemical detection of gaseous,...
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Emerging materials and processes for nanotechnologies and microelectronics
Epitaxial layer on GaAs or Ge transfer to sapphire or silicate for gravitational waves mirror realization
Gravitational waves were predicted by the theory of general relativity, they are created in the universe by extreme cosmic events. Their measurement on earth in large instruments such as VIRGO in Italy is a challenge in terms of measurement sensitivity. These instruments are large interferometers (several kilometers), and the entire optical chain must minimize noise...
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Emerging materials and processes for nanotechnologies and microelectronics
Study of co-integrated TeraHertz source arrays in Silicon and III-V photonics technology
TeraHertz (THz) radiation is of growing interest for imaging and spectroscopy in various application fields such as safety, health, environment and industrial control, since in this frequency range many dielectric materials are transparent and many molecules present unique spectral signatures for their identification. However, the limitations of the current sources, required for this active Imaging,...
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Emerging materials and processes for nanotechnologies and microelectronics
Innovative dry etching process of exotic materials
The advantageous properties (electro-optical, - acoustic, -mechanical) of new materials such as Sc-doped ALN, LNO, LTO or KNN make them essential to meet the development needs of integrated optics, RF telecommunication and microsystems. The production of patterns with submicron dimensions with a significant etch rate (>100nm/min), a vertical profile and a reduced roughness of the...
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Emerging materials and processes for nanotechnologies and microelectronics
Development of deposit/etch processes for SADP integration to FD10 node
Developement of new technologic nodes involves both a pattern dimension shrink and a pattern density increase. For the last years, development of multi-Patterning strategies with in particular Spacer Patterning (also called SADP) has signifcantly increased. This approach is based on a sacrificial pattern on which a material is depsosited with a conformal configuration to be...
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Emerging materials and processes for nanotechnologies and microelectronics
Etch and integration of phase change materials for reconfigurable photonic
Chalcogenide glasses are materials of interest for many applications: in phase-change memories, for example optical storage (CD-RW, DVD-RAM, Blu-ray Disks) or more recently Storage Class Memory, as a selector in 3D architecture resistive memories (OTS selector) or as an active medium for non-linear optics and reconfigurable photonics. In the latter case, the production of metasurfaces...
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Emerging materials and processes for nanotechnologies and microelectronics
Towards sustainable and reliable piezoelectric technology for MEMS actuator and sensor devices
Proven or predictable shortages of materials and the necessary frugality associated with the energy transition create a constrained framework for the sustainable deployment of microelectronics and microsystems technologies. This thesis is thus part of an approach that aims to significantly reduce the environmental footprint of piezoelectric MEMS actuator/sensor technology. The latter is based on the...
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Emerging materials and processes for nanotechnologies and microelectronics
Ecodesign of sintered interonnects : reliability and repairability improvement
Metallic sintering, particularly silver-based or copper-based sintering, is a component interconnects technique alternative to soldering, used in particular in the field of power electronics. The main advantages of this technique are first of all its very high thermal and electrical conductivity, but also the fact that the sintered interconnection (with a process realized for example...
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Emerging materials and processes for nanotechnologies and microelectronics
Semiconductor perovskites for the future of medical radiography: experimental analysis of doping and link to electrooptical performance
X-rays is the most widely used medical imaging modality for the detection of pathologies, the monitoring of their evolution and during certain surgical procedures. The objective of this thesis is to study a new semiconductor material based on perovskites for direct X-ray detection. Their use in the form of photoconductive devices in matrix imagers should...
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Emerging materials and processes for nanotechnologies and microelectronics
Development of optomechanical clocks with integrated electronics
Time references (clocks) are components used in the majority of electronic circuits. CEA-Leti is a pioneer in the development of high-frequency/high-performance clocks using optomechanics, which combines two cutting-edge technologies: microelectromechanical resonators (MEMS) and silicon photonics. This breakthrough approach allows overcoming the constraints of current clock technologies. CEA-Leti has developed optomechanical components with state-of-the-art performance and...
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Emerging materials and processes for nanotechnologies and microelectronics
Intrafield placement error optimisation for advanced integration nodes
As part of the microelectronics growth plan, driven by the European directive France 2030, CEA Leti is acquiring new state-of-the-art tools and developing new technologies for future applications. The challenge is to develop several technological building blocks enabling the industrial transfer of microelectronic processes down to the 10nm technology node. Lithography is the most critical...
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Emerging materials and processes for nanotechnologies and microelectronics
Semi-polar GaN epitaxy for high frequency µLEDs
Semiconductor nitride-based LEDs have reached a high level of maturity due to their use in the field of lighting. While the internal electric field present in InGaN quantum wells does not limit the efficiency of blue LEDs, it does induce the confined quantum Stark effect (QCSE), which limits the bandwidth of the LEDs and thus...
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Emerging materials and processes for nanotechnologies and microelectronics
Development of advanced gallium oxide (Ga2O3) on polycrystalline silicon carbide (SiC) bilayer substrates for power electronics
Enhancing the efficiency of energy-conversion devices is a primary goal for numerous international organizations [1]. As a result, the power electronics and wide-band-gap materials industries require significant development effort to align with these objectives. Particularly, recent progress in silicon carbide (SiC) processing technologies [2]–[4] show that innovative substrate architectures have the potential to offer state-of-the...
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Emerging materials and processes for nanotechnologies and microelectronics
X-ray attacks of advanced technology integrated circuits
The CESTI laboratory in Grenoble is responsible for the safety evaluation of products (commercial or prototype). or prototypes). A wide range of tests can be carried out as part of these evaluations, including those designed to observe the target's behavior when faults are injected into integrated circuits. Fault injection consists of perturbing the system by...
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Emerging materials and processes for nanotechnologies and microelectronics
Impact and cohabitation of Lithium on a microelectronics platform
Context: Lithium-based materials, whether thin layers or bulk material, are of great interest for varied applications (batteries, RF components…). However, their cohabitation with other “standard” materials for microelectronics requires special attention regarding dissemination in the clean room and a potential impact on electrical performances of devices. Indeed, as a precaution, these materials are “confined” on...
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Emerging materials and processes for nanotechnologies and microelectronics
In situ study of the impact of the electric field on the properties of chalcogenide materials
Chalcogenide materials (PCM, OTS, NL, TE, FESO, etc.) are the basis of the most innovative concepts in microelectronics, from PCM memories to the new neuromorphic and spinorbitronic devices (FESO, SOT-RAM, etc.). Part of their operation relies on out-of-equilibrium physics induced by the electronic excitation resulting from the application of an intense electric field. The aim...
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Emerging materials and processes for nanotechnologies and microelectronics
Photonic Spiking Neural Networks based on Q-switched laser integrated on Silicon
Neuromorphic networks for signal and information processing have acquired recently a renewed interest considering the more and more complex tasks that have to be solved automatically in current applications: speech recognition, dynamic image correlation, rapid decision processing integrating a plurality of information sources, behavior optimization, etc… Several types of neuromorphic networks do exist and, among...
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Emerging materials and processes for nanotechnologies and microelectronics
Characterization and design of radiation-hardened HfO2-based non-volatile memories
This project concerns the characterization and design of radiation-hardened non-volatile memory circuits based on HfO2 material. This material is immune to both natural (space) and artificial (man-made) radiation, and can be used to enhance the reliability of data storage in harsh environments. What's more, when combined with FD-SOI CMOS technology, which also offers a certain...
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Emerging materials and processes for nanotechnologies and microelectronics
Realization of MOSFET gates at the sub-10nm node on FD-SOI
As part of the NextGen project and the European ChipACT to ensure the sovereignty and competitiveness of France and Europe in terms of electronic nano-components, CEA-LETI is launching the design of new FD-SOI chips. Already present daily in the automotive or connected object areas, 28-18nm FD-SOI transistors are produced in large volumes by microelectronics founders...
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Emerging materials and processes for nanotechnologies and microelectronics
Could convolutional neural network bring benefits in nanometrics etch processing?
The development and production of energy-efficient electronic components is a major challenge for the microelectronics sector. To answer such a challenge, CEA-Leti and CNRS-LTM does not only focus on building, making and testing new architecture. We also focus on developing greener process and investigating novative solutions to reduce the environmental impact. Precedent works on process...
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Emerging materials and processes for nanotechnologies and microelectronics
The impact of intrinsic and of extrinsic defects on the dynamic Ron and off-state leakage current of lateral GaN power devices
The intentional doping of lateral GaN power high electron mobility transistors (HEMTs) with carbon (C) impurities is a common technique to reduce buffer conductivity and increase breakdown voltage. However, this comes at the cost of increased intrinsic defects together with degraded dynamic on-resistance (Ron) and current-collapse effects. The aim of this project is compare the...
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Emerging materials and processes for nanotechnologies and microelectronics
Lithography process and design rules co-optimisation for advance microelectronics
Historically, the development of integrated circuit performance has been based on the reduction in size of individual components. The main driving force behind this miniaturization is photolithography, a key step in the semiconductor component manufacturing process. This process consists in reproducing the design of the circuits to be produced in a photosensitive resin. These complex...
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Emerging materials and processes for nanotechnologies and microelectronics
Design of FD-SOI-specific True Random Number Generator
TRNGs are the essential block of any cryptographic system. Current standards, such as AIS-31, require a stochastic model, which directly relates the model of the physical source of randomness to the entropy of the generated random bits. TRNGs are benchmarked based on their throughput, efficiency and robustness. As such, FD-SOI (Fully Depleted Silicon on Insulator)...
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Emerging materials and processes for nanotechnologies and microelectronics
Study of innovative MOS gate stack for energy efficient SiC power transistors.
Silicon carbide (SiC) components represent the future of power electronics, surpassing silicon technologies in terms of temperature tolerance and power handling capability. At the heart of this evolution, CEA Leti plays a key role in the development of these new generation components, essential for applications such as electric vehicles, charging systems or photovoltaic installations. Our...
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Emerging materials and processes for nanotechnologies and microelectronics
Design and construction of a snubber circuits associated with a power transistors in order to reduce disturbances during fast switching.
The thesis topic is aligned with the European Common Interest Project IPCEI ME/CT, which aims to enhance the value of the European semiconductor sector. It particularly investigates protection systems for direct current (DC) electrical networks against power overloads, short circuits, and electric arc incidents. These complex systems rely on power transistors to manage controlled disconnection...
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Emerging materials and processes for nanotechnologies and microelectronics
Development and characterization of low temperature Cu-dielectric hybrid bonding
Cu-dielectric hybrid bonding is a technology that enables the assembly of components with very fine interconnection pitch, opening the path to new integrations for advanced applications such as High Performance Computing, Smart Imagers,… Leti has been engaged for more than 10 years in the development of this technology, in partnership with various industries and academies,...
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Emerging materials and processes for nanotechnologies and microelectronics
Advanced fully-depleted Silicon-on-insulator devices for Radio-Frequency applications
The PhD will be performed in the NEXTGEN project aimed at developing the next generation of Silicon-on-insulator devices. Our laboratory is driving the development of the RF active devices: this is a great opportunity to carry out fundamental research using state-of-the art processing equipment and characterization instruments while working in close collaboration with our industrial...
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Emerging materials and processes for nanotechnologies and microelectronics
Titanium silicide integration on future generation of low power transistor
In the ultra-competitive world of semi-conductor industry, CEA work on development of very low power transistor with high performances called FD-SOI for European industry. The PhD will take place inside CEA-LETI, worldwide known for its expertise on FD-SOI field. Inside LETI, you will be part of a 6 to 7 people team working on silicides....
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Emerging materials and processes for nanotechnologies and microelectronics
Seeking the maximal active dopant concentration in Si using nanosecond laser annealing
In conventional CMOS technology, source & drain regions of transistors are formed by ion implantation of selected impurities (B, P) in silicon or SiGe alloy, and a subsequent thermal treatment to cure the crystal and electrically activate the dopants. In the case of 3D-sequential integration, an architecture in which at least tow levels of transistors...